P & N-Channel 30-V (D-S) MOSFET
Features
-Low r DS(on) Provides Higher Efficiency and Extends Battery Life
-Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications
Product Summary
V DS (V) r DS(on) (m Ω) I D (A) 20@V GS =4.5V
8.4 30 13.5@V
GS =10V 10.0 30@V GS =-4.5V -6.8 -30
19@V GS =-10V
-8.5
Pin Assignments
SOP-8
D1D1D2D2
S1G1S2G2
General Description
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system, and telephones power system.
Pin Descriptions
Pin Name
Description
S1 Source (NMOS)
G1 Gate (NMOS) D1 Drain (NMOS) S2 Source (PMOS) G2 Gate (PMOS) D2 Drain (PMOS)
Ordering information
F :MOSFET
S: SOP-8
Blank : Normal
L : Lead Free Package
Blank : Tube or Bulk A : Tape & Reel
P & N-Channel 30-V (D-S) MOSFET
Absolute Maximum Ratings (T A =25ºC unless otherwise noted)
Symbol Parameter N-Channel P-Channel Units V DS Drain-Source Voltage 30 -30 V GS Gate-Source Voltage 20 -25 V
T A =
25ºC 10 -8.5
I D Continuous Drain Current (Note 1) T A =70ºC
8.1 -6.8 A I DM Pulsed Drain Current (Note 2) ±50 ±50 A I S Continuous Source Current (Diode Conduction) (Note 1) 2.3 -2.1 A
T A =25ºC 2.1 2.1
P D Power Dissipation (Note 1) T A =70ºC 1.3 1.3
W
T J , T STG Operating Junction and Storage Temperature Range - -55 to 150 ºC
Thermal Resistance Ratings
Symbol Parameter Maximum
Units R θJC Maximum Junction-to-Case (Note 1) t < 5 sec 40 ºC/W R θJA Maximum Junction-to-Ambient (Note 1) t < 5 sec
60 ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (T A =25ºC unless otherwise noted)
Limits Symbol Parameter Test Conditions
Ch
Min.Typ.
Max.
Unit
Static
V GS =0V, I D =
250uA N 30 - -
V (BR)DSS Drain-Source breakdown Voltage V GS =0V, I D =-250uA P
-30 - - V
V DS = V GS , I D =250uA N 1 1.95 3
V GS(th) Gate-Threshold Voltage V DS = V GS , I D =
-250uA
P -1.0-1.6 -3 V
V GS =20V, V DS =0V N - - ±100
I GSS Gate-Body Leakage V GS =-20V, V DS =
0V P - -
±100nA
V DS =24V, V GS =0V N - - 1
I DSS
Zero Gate Voltage Drain Current
V DS =-24V, V GS =0V P - - -1 uA
V DS =5V, V GS =
10V N 20 - -
I D(on) On-State Drain Current (Note 3)
V DS =-5V, V GS =
-10V P -50 - - A
V GS =10V, I D =
10A - 11 13.5
V GS =4.5V, I D =8.4A N
- 15 20
V GS =-10V, I D =-8.5A - 16 19
r DS(on)
Drain-Source On-Resistance
(Note 3)
V GS =-4.5V, I D =-6.8A P
- 26 30 m Ω
V DS =15V, I D =
10A N - 40 -
g fs
Forward Tranconductance
(Note 3)
V DS =-15V, I D =-9.5A P - 31 -
S
P & N-Channel 30-V (D-S) MOSFET
Specifications (T A =25ºC unless otherwise noted)
Limits Symbol Parameter
Test Conditions
Ch
Min.Typ.
Max.
Unit
Dynamic
N - 12 19 Q g Total Gate Charge P - 13 26 N - 3.3 -
Q gs Gate-Source Charge P - 5.8 - N - 4.5 - Q gd Gate-Drain Charge N-Channel
V DS =15V, V GS =4.5V I D =10A P-Channel
V DS =-15V, V GS =-4.5V I D =-10A
P - 12 -
nC
Switching N - 20 30 t d(on)
Turn-On Delay Time
P - 15 26 N - 9 20 t r Rise Time P - 16 21
N - 70 102 t d(off) Turn-Off Delay Time P - 62 108 N - 20 81 t f Fall-Time
N-Channel
V DD =15, V GS =10V I D =1A, R GEN =25Ω P-Channel
V DD =-15, V GS =-10V I D =-1A, R GEN =15Ω
P 46 71
nS
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (Continued)
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (Continued)
P & N-Channel 30-V (D-S) MOSFET
Typical Performance Characteristics (Continued)
P & N-Channel 30-V (D-S) MOSFET
Marking Information
SOP-8L
( Top View )
4 5 0 2 C
AA Y W "A~Z": 27~52~
"A~Z": 27~52"X": Lead Free
Package Information Package Type: SOP-8L
Dimensions In Millimeters Dimensions In Inches
Symbol
Min. Nom. Max. Min. Nom. Max.
A 1.40 1.60 1.75 0.055 0.063 0.069 A1 0.10 - 0.25 0.040 - 0.100 A2 1.30 1.45 1.50 0.051 0.057 0.059
B 0.33 0.41 0.51 0.013 0.016 0.020
C 0.19 0.20 0.25 0.0075 0.008 0.010
D 4.80 5.05 5.30 0.1 0.199 0.209
E 3.70 3.90 4.10 0.146 0.154 0.161 e - 1.27 - - 0.050 - H 5.79 5.99 6.20 0.228 0.236 0.244 L 0.38 0.71 1.27 0.015 0.028 0.050 y - - 0.10 - - 0.004
θ
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