FAST SWITCHING DIODE

·Fast Switching Speed

·General Purpose Rectification

·

Silicon Epitaxial Planar Construction

Characteristic

Symbol 1N4148

1N4448

Unit Non-Repetitive Peak Reverse Voltage V RM 100V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 75V RMS Reverse Voltage

V R(RMS)53

V Forward Continuous Current (Note 1)I FM 300

500mA Average Rectified Output Current (Note 1)

I O 150mA Non-Repetitive Peak Forward Surge Current @ t = 1.0s

@ t = 1.0m s I FSM 1.02.0A Power Dissipation (Note 1)Derate Above 25°C

P d 5001.68mW mW/°C Thermal Resistance, Junction to Ambient Air (Note 1)R q JA 300K/W Operating and Storage Temperature Range

T j ,T STG

-65 to +175

°C

Maximum Ratings @ T A = 25°C unless otherwise specified

Notes: 1.Valid provided that device terminals are kept at ambient temperature.

Characteristic

Symbol

Min Max Unit Test Condition Maximum Forward Voltage

1N41481N44481N4448

V FM

¾0.62¾ 1.00.721.0V I F = 10mA I F = 5.0mA I F = 100mA

Maximum Peak Reverse Current I RM ¾ 5.0503025m A m A m A nA V R = 75V

V R = 70V,T j = 150°C V R = 20V,T j = 150°C V R = 20V

Capacitance

C j ¾ 4.0pF V R = 0, f = 1.0MHz Reverse Recovery Time

t rr

¾

4.0

ns

I F = 10mA to I R =1.0mA V R = 6.0V,R L = 100W

Electrical Characteristics

@ T A = 25°C unless otherwise specified

Features

·Case: DO-35

·Leads: Solderable per MIL-STD-202,Method 208

·Polarity: Cathode Band ·Marking: Type Number

·

Weight: 0.13 grams (approx.)

Mechanical Data

A

A

B C

D

DO-35

Dim Min Max A 25.40¾B ¾ 4.00C ¾0.60D

¾

2.00

All Dimensions in mm

1

10

100

1000

10,000

100

200

I ,L E A K A G E C U R R E N T (n A )

R T ,JUNCTION TEMPERATURE (C)

Fig.2,Leakage Current vs Junction Temperature

j

°10

1.0

100

1000

0.1

0.01

1

2

I ,I N S T A N T A N E O U S F O R W A R D C U R R E N T (m A )

F V ,INSTANTANEOUS FORWARD VOLTAGE (V)

Fig.1Forward Characteristics

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