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mrf151g
2025-09-30 01:48:06 责编:小OO
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3

MRF151G

MOTOROLA RF DEVICE DATA

Figure 2. Capacitance versus

Drain–Source Voltage*

Figure 3. Common Source Unity Gain Frequency

versus Drain Current*

Figure 4. Gate–Source Voltage versus

Case Temperature*

Figure 5. DC Safe Operating Area

Figure 6. RF Transformer

*Data shown applies to each half of MRF151G.

V G S , D R A I N -S O U R C E V O L T A G E (N O R M A L I Z E D )

100050020010050

0200

1020304050

C , C A P A C I T A N C E (p F )

V DS , DRAIN–SOURCE VOLTAGE (VOLTS)

1.040.9–25

025*******T C , CASE TEMPERATURE (°C)

1.031.021.0110.990.980.970.960.950.940.930.920.91C iss C oss

C rss

I D = 5 A

4 A 2 A 1 A

250 mA

100 mA

100

10

12

20

200

V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)

20000

04

8121620

I D , DRAIN CURRENT (AMPS)

1000

V DS = 30 V

I D , D R A I N C U R R E N T (A M P S )

2610141815 V

T C = 25°C

f T , U N I T Y G A I N F R E Q U E N C Y (M H z )

HIGH IMPEDANCE WINDINGS

CENTER TAP

CENTER TAP

4:1IMPEDANCE RATIO

9:1IMPEDANCE RATIO

CONNECTIONS TO LOW IMPEDANCE

WINDINGS

MOTOROLA RF DEVICE DATA

Figure 9. Input and Output Impedance

15030

f = 175 MHz

Z o = 10 Ω

Z OL * = Conjugate of the optimum load impedance Z OL * = into which the device output operates at a Z OL * = given output power, voltage and frequency.

f = 175 MHz 125100

INPUT, Z in (GATE TO GATE)

OUTPUT, Z OL *(DRAIN TO DRAIN)

150

12510030

PACKAGE DIMENSIONS

MRF151G

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