Document Number 83760www.vishay.com
Reflective Optical Sensor with Transistor Output
Description
The TCRT5000 and TCRT500L are reflective sensors which include an infrared emitter and phototransistor in a leaded package which blocks visible light. The package includes two mounting clips. TCRT5000L is the long lead version.
Features
•Package type: Leaded
•Detector type: Phototransistor •Dimensions:L 10.2 mm x W 5.8 mm x H 7.0 mm •Peak operating distance: 2.5 mm •Operating range: 0.2 mm to 15 mm
•Typical output current under test: I C = 1 mA •Daylight blocking filter
•Emitter wavelength 950 nm
•Lead (Pb)-free soldering released
•Lead (Pb)-free component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Applications
•Position sensor for shaft encoder
•Detection of reflective material such as paper, IBM cards, magnetic tapes etc.
•Limit switch for mechanical motions in VCR
•General purpose - wherever the space is limited
Order Instructions
Absolute Maximum Ratings
T amb = 25°C, unless otherwise specified
Input (Emitter)
Part Number
Remarks Minimum Order Quantity TCRT5000 3.5 mm lead length 4500 pcs, 50 pcs/tube TCRT5000L
15 mm lead length
2400 pcs, 48 pcs/tube
Parameter
T est condition
Symbol Value Unit Reverse voltage V R 5V Forward current I F 60mA Forward surge current t p ≤ 10 µs I FSM 3A Power dissipation T amb ≤ 25 °C
P V 100mW Junction temperature
T j
100
°C
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Output (Detector)
Sensor
Electrical Characteristics
T amb = 25°C, unless otherwise specified
Input (Emitter)
Output (Detector)
Parameter
Test condition
Symbol Value Unit Collector emitter voltage V CEO 70V Emitter collector voltage V ECO 5V Collector current I C 100mA Power dissipation T amb ≤ 55 °C
P V 100mW Junction temperature
T j
100
°C
Parameter
Test condition
Symbol Value Unit Total power dissipation T amb ≤ 25 °C
P tot 200mW Operation temperature range T amb - 25 to + 85°C Storage temperature range T stg - 25 to + 100
°C Soldering temperature
2 mm from case, t ≤ 10 s
T
sd
260
°C
Figure 1. Power Dissipation Limit vs. Ambient Temperature
95 11071
P - P o w e r D i s s i p a t i o n (m W )
T am b - Am b ient Temperat u re (°C)
255075100
Parameter
Test condition
Symbol Min
Typ.Max Unit Forward voltage I F = 60 mA V F 1.25 1.5
V Junction capacitance V R = 0 V , f = 1 MHz C j 17
pF Radiant intensity I F = 60 mA, t P = 20 ms I E 21mW/sr Peak wavelength I F = 100 mA
λP 940
nm Virtual source diameter
Method: 63 % encircled energy
Ø
2.1
mm
Parameter
Test condition
Symbol Min Typ.
Max
Unit Collector emitter voltage I C = 1 mA V CEO 70V Emitter collector voltage I E = 100 µA
V ECO 7
V Collector dark current
V CE = 20 V , I F = 0, E = 0
I CEO
10
200
nA
Document Number 83760www.vishay.com
Sensor
1)
See figure 3
2) Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)
Typical Characteristics
T amb = 25°C, unless otherwise specified
Parameter
T est condition
Symbol Min T yp.Max Unit Collector current
V CE = 5 V , I F = 10 mA, D = 12 mm
I C 1,2)0.5
1
2.1mA Collector emitter saturation voltage
I F = 10 mA, I C
= 0.1 mA,
D = 12 mm
V CEsat 1,2)
0.4
V
Figure
2. Test Circuit V CC
Figure 3. Test Circuit
∅ Figure 4. Forward Current vs. Forward Voltage
0V F - For w ard V oltage (V )
96 11862
F I -
F o r w a r d C u r r e n t (m A ) 1.60.2 1.41.21.00.8 0.6 0.4 2.0
1.8Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
0.8T a m b - Am b ient Temperat u re (°C)
96 11762
C T R - R e l a t i v e C u r r e n t T r a n s f e r R a t i o
r e l - 30- 20403020100-1080 70 5060100
90
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Figure 6. Collector Current vs. Forward Current Figure 7. Collector Emitter Saturation Voltage vs. Collector Current
Figure 8. Current Transfer Ratio vs. Forward Current
0.1
I F - For w ard C u rrent (mA)
96 11763
I - C o l l e c t o r C u r r e n t (m A )
C 100
101
0.1
V CE - Collector Emitter V oltage (V )
96 117
I - C o l l e c t o r C u r r e n t (m A )
C 10 1
100
0.1
I F - For w ard C u rrent (mA)
96 11765
C T R - C u r r e n t T r a n s
f e r R a t i o (%)
100
10 1 Figure 9. Relative Collector Current vs. Distance
0.80
d - Distanc
e to Reflecting Card (mm)
96 11766
I -
R e l a t i v e C o l l e c t o r C u r r e n t C r e l 14121086
4216
Package Dimensions in mm
Document Number 83760www.vishay.com
www.vishay.com Document Number 83760
TCRT5000(L)
Document Number 83760Rev. 1.6, 04-Sep-06Vishay Semiconductors
www.vishay.com 7
TCRT5000, Tube Dimensions
TCRT5000L, Tube Dimensions
TCRT5000(L)
Vishay Semiconductors
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2.Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the L ondon Amendments
respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000
www.vishay.com Revision: 18-Jul-081Disclaimer
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