t ≤ 10s Steady-State Steady-State

R θJC

Pulsed Drain Current C

Continuous Drain Current G

Parameter

Typ Max =25°C =100°C Junction and Storage Temperature Range °C

Thermal Characteristics

Units Maximum Junction-to-Ambient A °C/W R θJA 144018V Gate-Source Voltage Drain-Source Voltage V Units Parameter

Absolute Maximum Ratings T A =25°C unless otherwise noted

Repetitive avalanche energy L=0.1mH

C

mJ Avalanche Current C

Continuous Drain Current

A A

=25°C A =70°C

=25°C =100°C Power Dissipation B W Power Dissipation

A

W =70°

C =25°C Maximum Junction-to-Case

°C/W

°C/W Maximum Junction-to-Ambient A D 1551.5ecovery MOS FET :Integrated Schottky Diode

PIN1

Symbol

Min Typ Max Units BV DSS 30

V

V DS =30V, V GS =0V

0.1T J =125°C

100I GSS 0.1

µA V GS(th)Gate Threshold Voltage 1.2 1.8

2.4V I D(ON)

260

A 1.72T J =125°C

2.6

3.22.43

m Ωg FS 140S V SD 0.45

0.7V I S

85

A C

iss 4720

59007080pF C oss 77011001430pF C rss 336560784pF R g

0.20.40.6ΩQ g (10V)82

103123nC Q g (4.5V)415161nC Q gs 141720nC Q gd 14

2332

nC t D(on)17ns t r 11ns t D(off)61ns t f 27

ns

t rr 141720ns Q rr

32

40

48

nC

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge I F =20A, dI/dt=500A/µs

Maximum Body-Diode Continuous Current

Input Capacitance Output Capacitance

Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =0.75Ω,

R GEN =3Ω

Gate resistance

V GS =0V, V DS =0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge V GS =10V, V DS =15V, I D =20A

Gate Source Charge Gate Drain Charge Total Gate Charge m ΩI S =1A,V GS =0V

V DS =5V, I D =20A V GS =4.5V, I D =20A

Forward Transconductance Diode Forward Voltage

R DS(ON)Static Drain-Source On-Resistance

I DSS mA V DS =V GS I D =250µA V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter

Conditions Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage On state drain current

I D =1mA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =20A

Reverse Transfer Capacitance I F =20A, dI/dt=500A/µs

V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS A. The value of R θJA is measured with the device mounted on 1in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.

B. The power dissipation P D is based on T J(MAX)=150°

C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°

C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C.Maximum UIS current limited by test equipment.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T J(MAX)=150°

C. The SOA curve provides a single pulse ratin g.G. The maximum current rating is limited by package.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

V GS (Volts)

Figure 2: Transfer Characteristics (Note E)

I D (A )

V DS (Volts)

Fig 1: On-Region Characteristics (Note E)

I D (A )

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Q g (nC)

Figure 7: Gate-Charge Characteristics V G S (V o l t s )

05

10152025

V DS (Volts)

Figure 8: Capacitance Characteristics C a p a c i t a n c e (p F )

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

AON6702

Vds

Charge

Gate Charge Test Circuit & Waveform

Vdd

Resistive Switching Test Circuit & Waveforms

Vdd

Vds

Id

Vgs

BV I

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms AR

DSS

2

E = 1/2 LI Vdd AR AR Rev 2: November 2010 Page 7 of 7下载本文