NTS4101P Power MOSFET

−20 V, −1.37 A, Single P−Channel, SC−70

Features

•Leading −20 V Trench for Low R DS(on)•−2.5 V Rated for Low V oltage Gate Drive

•SC−70 Surface Mount for Small Footprint (2x2 mm)•

Pb−Free Package is Available

Applications

•High Side Load Switch •Charging Circuit

•Single Cell Battery Applications such as; Cell Phones,

Digital Cameras, PDAs

MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

THERMAL RESISTANCE RATINGS

Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

Device Package Shipping †ORDERING INFORMATION

NTS4101PT1SOT−3233000/T ape & Reel http://onsemi.com

V (BR)DSS

R DS(on) TYP I D Max

−20 V

83 m W @ −4.5 V

88 m W @ −3.6 V 104 m W @ −2.5 V

−1.37 A †For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

NTS4101PT1G

SOT−323(Pb−Free)

3000/T ape & Reel

OFF CHARACTERISTICS

ON CHARACTERISTICS (Note 2)

CHARGES AND CAPACITANCES

SWITCHING CHARACTERISTICS (Note 3)

DRAIN−SOURCE DIODE CHARACTERISTICS

2.Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.

3.Switching characteristics are independent of operating junction temperatures.

1234

−I D , D R A I N C U R R E N T (A )

R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (W )

−50

−250255075100125150

Figure 5. On−Resistance Variation with

Temperature

T J , JUNCTION TEMPERATURE (°C)

R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (N O R M A L I Z E D )

Figure 6. Capacitance Variation

56

048121620

−DRAIN−TO−SOURCE VOLTAGE (V)

Q g , TOTAL GATE CHARGE (nC)Figure 7. Gate−to−Source and Drain−to−Source

Voltage versus Total Charge

Figure 8. Diode Forward Voltage versus

Current

−V SD , SOURCE−TO−DRAIN VOLTAGE (V)

−V G S , G A T E −T O −S O U R C E V O L T A G E (V )

PACKAGE DIMENSIONS

SC−70 (SOT−323)CASE 419−04ISSUE L

STYLE 8:

PIN 1.GATE 2.SOURCE 3.DRAIN

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198

2.

2.CONTROLLING DIMENSION: INCH.

DIM MIN MAX MIN MAX MILLIMETERS

INCHES A 0.0710.087 1.80 2.20B 0.0450.053 1.15 1.35C 0.0320.0400.80 1.00D 0.0120.0160.300.40G 0.0470.055 1.20 1.40H 0.0000.0040.000.10J 0.0040.0100.100.25K 0.017 REF 0.425 REF L 0.026 BSC 0.650 BSC N 0.028 REF 0.700 REF S

0.0790.095

2.00 2.40

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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