7N60
Power MOSFET
7.4 Amps, 600/650 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N60 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES
* R DS(ON) = 1.0Ω @V GS = 10 V
* Ultra low gate charge (typical 29 nC )
* Low reverse transfer Capacitance ( C RSS = typical 16pF ) * Fast switching capability * Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
1.Gate
Lead-free: 7N60L Halogen-free: 7N60G
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 1 2 3 Packing
7N60-x-TA3-T 7N60L-x-TA3-T 7N60G-x-TA3-T TO-220 G D S Tube 7N60-x-TF1-T 7N60L-x-TF1-T 7N60G-x-TF1-T TO-220F1 G D S Tube 7N60-x-TF3-T 7N60L-x-TF3-T 7N60G-x-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source
(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn
ABSOLUTE MAXIMUM RATINGS (T C = 25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
7N60-A 600 V
Drain-Source Voltage 7N60-B V DSS
650 V
Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 7.4 A
Continuous I D 7.4 A
Drain Current
Pulsed (Note 2) I DM 29.6
A Single Pulsed (Note 3)E AS 530 mJ
Avalanche Energy
Repetitive (Note 2) E AR 14.2 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns
TO-220 142 W
Power Dissipation TO-220F/TO-220F1 P D
48 W
Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, I AS = 7.4A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C
4. I SD ≤ 7.4A, di/dt ≤ 200A/μs, V DD ≤ BV DSS , Starting T J = 25°C
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220 62.5 °C/W
Junction to Ambient TO-220F/TO-220F1θJA
62.5 °C/W TO-220 0.88 °C/W
Junction to Case TO-220F/TO-220F1θJC
2.6 °C/W
ELECTRICAL CHARACTERISTICS (T C =25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
7N60-A 600 V
Drain-Source Breakdown Voltage 7N60-B BV DSS V GS = 0V, I D = 250μA
650 V
Drain-Source Leakage Current I DSS V DS = 600V, V GS = 0V 1 μA
Forward V GS = 30V, V DS = 0V 100nA
Gate- Source Leakage Current Reverse I GSS
V GS = -30V, V DS = 0V -100nA
Breakdown Voltage Temperature Coefficient △BV DSS /△T J I D = 250μA,
Referenced to 25°C 0.67 V/°C
ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250μA 2.0 4.0V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, I D = 3.7A 1.0ΩDYNAMIC CHARACTERISTICS Input Capacitance C ISS 1400pF
Output Capacitance C OSS 180pF
Reverse Transfer Capacitance C RSS
V DS =25V, V GS =0V, f=1.0 MHz 16 21pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 70ns Turn-On Rise Time t R 170ns Turn-Off Delay Time t D(OFF) 140ns
Turn-Off Fall Time t F
V DD =300V, I D =7.4A, R G =25Ω
(Note 1, 2) 130ns Total Gate Charge Q G 29 38nC
Gate-Source Charge Q GS 7 nC
Gate-Drain Charge Q GD
V DS =480V, I D =7.4A, V GS =10 V
(Note 1, 2)
14.5 nC
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0V, I S = 7.4 A 1.4V
Maximum Continuous Drain-Source Diode
Forward Current
I S 7.4A
Maximum Pulsed Drain-Source Diode
Forward Current
I SM 29.6A
Reverse Recovery Time t RR 320 ns Reverse Recovery Charge Q RR
V GS = 0V, I S = 7.4 A, dI F / dt = 100A/μs (Note 1) 2.4 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature
TEST CIRCUITS AND WAVEFORMS
V DD
V GS (Driver)
I SD (D.U.T.)
Body Diode
Forward Voltage Drop
V DS (D.U.T.)
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Fig. 1B Peak Diode Recovery dv/dt Waveforms
TEST CIRCUITS AND WAVEFORMS
(Cont.)
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform
R G
10V
L
V DD
V
BV DSS
I
D(t)
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
TYPICAL CHARACTERISTICS
101100
Drain-Source Voltage, V DS (V)
D r a i n C u r r e n t , I D (A )
On-Region Characteristics
10100
10
Gate-Source Voltage, V
GS (V)
D r
a i n C u r r e n t ,
I
D
(
A )
Transfer Characteristics
10
1
D
r
a i
n -S o u r c e O n -R e s i s t a n c e , R D S (O N )
(Ω
)
R e v e r s e D
r a i n C u r
r e n t , I D R (A
)
C a p a c i t a n c e (p F
)
I D , D r a i n C u r r e n t (A
)
7N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD
TYPICAL CHARACTERISTICS(Cont.)
and reliable and may be changed without notice.
