Symbol V DS Drain-Source Voltage 30Maximum

Parameter Absolute Maximum Ratings T A =25°C unless otherwise noted D

G

G

D D S S

D G

G

D

D

S

S

D

Bottom View

V GS

I DM Symbol

t ≤ 10s Steady-State Steady-State

R θJC

Maximum Junction-to-Ambient A °C/W R θJA 1120Units Thermal Characteristics Parameter

Typ ±20Gate-Source Voltage Max I D 7055T C =25°C T C =100°C 159Pulsed Drain Current C

Continuous Drain Current G

18Continuous Drain 22T A =25°Maximum Junction-to-Case

°C/W

°C/W Maximum Junction-to-Ambient A D 2.1503

Symbol

Min Typ Max Units BV DSS 30

V

V DS =30V, V GS =0V

1T J =55°

C 5I GSS 100

nA V GS(th)

Gate Threshold Voltage

1.2

1.8

2.2V 2.43T J =125°

C 3.5 4.43.3 4.5

m Ωg FS 105S V SD 0.7

1V I S

58

A C iss 2010

pF

C oss 8pF C rss 124pF

R g

0.9

1.8

2.7ΩQ g (10V)36

49nC Q g (4.5V)1723

nC Q gs 6nC Q gd 8nC t D(on)7.5

ns t r 4.0ns ns Reverse Transfer Capacitance V GS =0V, V DS =15V, f=1MHz

V DS =V GS ，I D =250µA Turn-On Rise Time V GS =10V, V DS =15V, R L =0.75Ω,Turn-On DelayTime Gate resistance

V GS =0V, V DS =0V, f=1MHz

Total Gate Charge Gate Source Charge Gate Drain Charge Total Gate Charge SWITCHING PARAMETERS V GS =10V, V DS =15V, I D =20A

Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter

Conditions I DSS µA Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage I D =250µA, V GS =0V V DS =0V, V GS = ±20V Maximum Body-Diode Continuous Current

G

Input Capacitance Output Capacitance

Forward Transconductance I S =1A,V GS =0V

V DS =5V, I D =20A DYNAMIC PARAMETERS V GS =4.5V, I D =20A

R DS(ON)Static Drain-Source On-Resistance

Diode Forward Voltage

m ΩV GS =10V, I D =20A

Gate-Body leakage current t D(off)37.0t f 7.5ns t rr 14ns

Q rr

20.3

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time

I F =20A, dI/dt=500A/µs

Turn-Off DelayTime R GEN =3Ω

Turn-Off Fall Time

I F =20A, dI/dt=500A/µs

A. The value of R θJA is measured with the device mounted on 1in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0102030405060

25

50

75100125150

P o w e r D i s s i p a t i o n (W )

T CASE (°C)

Figure 12: Power De-rating (Note F)

020

40

6080

25

50

75100125150175

C u r r e n t r a t i n g I

D (A )

T CASE (°C)

Figure 13: Current De-rating (Note F)110100100010000

1E-05

0.001

0.1

10

1000

P o w e r

(

W )

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-T A =25°C

40

Single Pulse D=T on /T T J,PK =T A +P DM .Z θJA .R θJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Ambient (Note H)

R

θJA

=°C/W 0.001

0.01

0.1

1

10

1E-05

0.0001

0.001

0.01

0.1

1

10

100

1000

Z θJ A N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t a n c e

Pulse Width (s)

Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Single Pulse

D=T on /T T J,PK =T A +P DM .Z θJA .R θJA In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

R θJA =50°C/W

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