High-speed switching diode
1SS133
!Applications
High speed switching
!Features
1) Glass sealed envelope. (MSD)2) High reliability .
3) High speed. (trr=1.2ns Typ.)
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
φ1.8±0.2
φ0.4±0.1
22Min.
2.7±0.322Min.CATHODE BAND
ROHM : MSD JEDEC : DO-34
!Absolute maximum ratings (T a=25°C)
Parameter
Symbol Limits Unit Parameter
Symbol Limits Unit V RM V I surge mA 60090V R V P mW 30080I FM mA Tj ˚C 400175I O
mA
Tstg
˚C
130
−65~+175
Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current
Surge current (1s)Power dissipation Junction temperature Storage temperature
!Cathode band colors
Type Color 1SS133
Yellow
!Electrical characteristics (T a=25°C unless specified otherwise)
Parameter
Symbol Min.Typ.Max.Unit Conditions
V F V I F =100mA -0.92 1.2I R µA -0.0200.5V R =80V
pF V R =0.5V, f =1MHz - 1.552t rr
ns
V R =6V, I F =10mA, R L =50Ω
- 1.5
4
C T Forward voltage Reverse current
Capacitance between terminals Reverse recovery time
Diodes
!Electrical characteristics curves (T a=25°C)
T a =125˚C 0.20.40.60.8 1.0 1.2 1.4 1.60.20.5125102050100T a =75˚C T a =25˚C T a =−25˚C
F O R W A R D C U R R E N T : I F (m A )
FORWARD VOLTAGE : V F (V)Fig. 1 Forward characteristics
0100˚C
70˚C
50˚C
T a =25˚C
204060801001203
10301003001 0003 000REVERSE VOLTAGE : V R (V)R E V E R S E C U R R E N T : I R (n A )
Fig. 2 Reverse characteristics
0102030
0.51.01.52.02.53.0
51525f=1MHz
REVERSE VOLTAGE : V R (V)
C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )
Fig. 3 Capacitance between
terminals characteristics
Fig. 4 Reverse recovery time
characteristics
01020301
2
3V R =6V I rr =1/10I R
R E V E R S E R E C O V E R Y T I M E : t r r (n s )
FORWARD CURRENT : I F (mA)
0.01
0.11101001000
0.10.20.5
1
25
10PULSE Single pulse
S U R G E C U R R E N T : I s u r g e (A )
PULSE WIDTH : Tw (ms)
Fig.5 Surge current characteristics
Fig. 6 Reverse recovery time (t rr ) measurement circuit下载本文
