SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 2 - OCTOBER 1997
7
FEATURES: •High current capability •Low V F APPLICATIONS: •Mobile telecomms, PCMIA & SCSI •DC-DC Conversion
PARTMARKING DETAILS : ZS1
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
75125
1
10
100
30
30
VF - Forward Voltage (V)
I F v V F
1m
I F - F o r w a r d C u r r e n t (A )
I F (a v ) - A v g F w d C u r (A )
TC - Case T emperature (°C)
I F(av)v T C
T a - A m b i e n t T e m p (°C )
125
75VR - Reverse Voltage (V)
T a v V R
+50° C
+25°C
I R - R e v e r s e C u r r e n t (A )
+100°C
10n
VR - Reverse Voltage (V)
I R v V R
P F (a v ) - A v g P w r D i s s (W )
0IF(av) - Avg Fwd Curr (A)
P F(av)v I F(av)
C D - D i o d e C a p a c i t a n c e (p F )
200
100
0VR - Reverse Voltage (V)
C D v V R
Rth=100° C/W
-55°C
+125°C
10
20
+25°C +125°C 10
20
-55° C
8595105115DC
D=0.5
D=0.2
D=0.1
D=0.05
DC D=0.5D=0.2D=0.1D=0.05
Rth=200° C/W Rth=300° C/W
100
100n
1u 10u 100u
1m 10m
100m
Typical
Typical Tj=125°C
Typical
0.1
0.2
0.3
0.4
0.5
0.6
10m
100m
1
10
0.4
0.8 1.2
0.2
0.4
0.6
0.2
0.4
0.6
0.8F(av)P F(av)=I x
V
F
p t 1
t 1D=t /t
p
I F(pk)
I F(av)=D x I
F(pk)
p
t 1
t 1D=t /t
p
I F(pk)
I F(av)=D x I
F(pk)
TYPICAL CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.下载本文
